1 . 9 2. 80? 0. 05 1. 60? 0. 05 0 . 3 5 2 . 9 2 ? 0 . 0 5 0 . 9 5 ? 0 . 0 2 5 1 . 0 2 2SC2223 transistor (npn) features power dissipation p cm : 150 mw (tamb=25 ) collector current i cm : 20 ma collector-base voltage v (br)cbo : 30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=100a, i e =0 30 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 20 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 4 v collector cut-off current i cbo v cb = 25 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 3 v, i c =0 0.1 a dc current gain h fe(1) v ce = 6 v, i c = 1 ma 40 180 collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 1 ma 0.3 v base-emitter voltage v be v ce = 6 v, i c = 1 ma 0.72 v transition frequency f t v ce = 6 v, i c = 1 ma 400 mhz collector output capacitance c ob v cb = 6 v, i e =0, f= 1 mhz 1 pf noise figure nf v ce = 6 v, i c = 1 ma, f= 100m hz, rg= 50 ? 3 db classification of h fe(1) rank f12 f13 f14 range 40-80 60-120 90-180 marking sot-23-3l 1. base 2. emitter 3. collector 2SC2223 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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